Raman Characterization of MBE-Grown Layered MnTe/CdTe Structures
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چکیده
منابع مشابه
Photoluminescence characterization of MBE grown Zn 1 ~ x Be x
We report photoluminescence (PL) studies of high-quality Zn 1~x Be x Se "lms grown by molecular beam epitaxy (MBE) on GaAs substrates by use of a novel growth method of Be}Zn co-irradiation before the growth of a thin ZnSe bu!er layer. Samples show double-crystal X-ray linewidth as narrow as 23 arcsec. Low-temperature (13K) PL of undoped samples showed free exciton emission, which de"ned the ba...
متن کاملPhotoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. ...
متن کاملEffects of Varying MBE Growth Conditions on Layered Zn-Se-Te Structures
1.—Department of Physics, Queens College of CUNY, 65-30 Kissena Blvd, Flushing, NY 11367, USA. 2.—Department of Electrical Engineering, The City College of CUNY, 160 Convent Avenue, New York, NY 10031, USA. 3.—Department of Chemistry, The City College of CUNY, Convent Avenue at 138th Street, New York, NY 10031, USA. 4.—The Graduate Center, CUNY, 365 5th Avenue, New York, NY 10016, USA. 5.—e-mai...
متن کاملStimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
V.Yu. Ivanov, M. Godlewski, S. Miasojedovas, S. Juršėnas, K. Kazlauskas, A. Žukauskas, C. Skierbiszewski, M. Siekacz, M. Leszczyński, P. Perlin, T. Suski and I. Grzegory Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Materials Science and Applied Research, Vilnius University Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania High Pr...
متن کاملOptical characterization of InAs delta-layers grown by MBE at different substrate temperatures
InAs layers with thickness of 1 monolayer (d-layers) were grown by MBE embedded in GaAs barriers in the direction [1 0 0]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the d-layers. By secondary-ion mass spectroscopy (SIMS) we checked out the possible In segregation. The samples consist of five InAs d-layers embedded in between 60 nmthick GaAs barriers...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1997
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.92.1021